IBM publishes high-speed CMOS-compatible III-V on Si membrane photodetectors

DIMENSION partner IBM published one significant project result on CMOS-compatible III-V on Si photodetectors by using a lateral current collection schemes, investigated in DIMENSION. The ultra-compact  high-responsive devices show a sub-femtofarad capacitance and therefore,a high bandwidth up to around 65 GHz, which enables high data speeds at 100 GBaud. The thickness and efficiency of the detectors enable a direct integration in the back-end-of-line without using an additional amplifier in the receiver system, leading to further reduction of the power consumption of an optical communication link.

For more information, please refer to Scientific Publications.